SUD30N03-30 vishay siliconix document number: 70268 s-57253erev. d, 24-feb-98 www.vishay.com faxback 408-970-5600 2-1 n-channel 30-v (d-s), 175 c mosfet
v ds (v) r ds(on) ( ) i d (a) 30 0.030 @ v gs = 10 v 30 30 0.045 @ v gs = 4.5 v 25 d g s n-channel mosfet to-252 s gd top view drain connected to tab order number: SUD30N03-30
parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t 175 c) t c = 25 c i d 30 a (t j = 175 c) t c = 100 c i d 21 a pulsed drain current i dm 40 a continuous source current (diode conduction) i s 30 maximum power dissipation t c = 25 c p d 50 w maximum power dissipation t a = 25 c p d 3 a w operating junction and storage temperature range t j , t stg 55 to 175 c
parameter symbol limit unit maximum junction-to-ambient r thja 50 c/w maximum junction-to-case r thjc 3.0 c/w notes a. surface mounted on 4o x 4o fr4 board. for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm
SUD30N03-30 vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70268 s-57253erev. d, 24-feb-98
parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zgvl dic i v ds = 30 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 125 c 50 a v ds = 30 v, v gs = 0 v, t j = 175 c 150 on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 30 a dis os r i b v gs = 10 v, i d = 15 a 0.020 0.030 drain - source on - state resistance b r ds(on) v gs = 10 v, i d = 15 a, t j = 125 c 0.033 0.050 drain - source on - state resistance b r ds(on) v gs = 10 v, i d = 15 a, t j = 175 c 0.036 0.054 v gs = 4.5 v, i d = 12.5 a 0.030 0.045 forward transconductance b g fs v ds = 15 v, i d = 15 a 10 22 s dynamic a input capacitance c iss 1170 f output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 320 pf reverse transfer capacitance c rss 60 total gate charge c q g v15vv10vi30a 18 35 c gate-source charge c q gs v ds = 15 v, v gs = 10 v, i d = 30 a 5.5 nc gate-drain charge c q gd 2 turn-on delay time c t d(on) v15vr05 10 20 rise time c t r v dd = 15 v, r l = 0.5 i 30a v 10v r 75 10 20 ns turn-off delay time c t d(off) dd , l i d 30 a, v gen = 10 v, r g = 7.5 25 40 ns fall time c t f 15 30 source-drain diode ratings and characteristic (t c = 25 c) pulsed current i sm 40 a diode forward voltage b v sd i f = 30 a, v gs = 0 v 1.1 1.5 v source-drain reverse recovery time t rr i f = 30 a, di/dt = 100 a/ s 50 100 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature.
SUD30N03-30 vishay siliconix document number: 70268 s-57253erev. d, 24-feb-98 www.vishay.com faxback 408-970-5600 2-3
0 6 12 18 24 30 0 8 16 24 32 40 0 300 600 900 1200 1500 0 6 12 18 24 30 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) on-resistance ( q g total gate charge (nc) i d drain current (a) v ds drain-to-source voltage (v) c capacitance (pf) r ds(on) w ) v gs transconductance (s) g fs 0 8 16 24 32 40 012345 0 2 4 6 8 10 0369121518 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0 8 16 24 32 40 0 8 16 24 32 40 0123456 25 c 55 c t c = 150 c v ds = 15 v i d = 30 a v gs = 10, 9, 8, 7, 6, 5 v v gs = 10 v v gs = 4.5 v c rss t c = 55 c 25 c 125 c 3 v 4 v c oss c iss i d drain current (a)
SUD30N03-30 vishay siliconix www.vishay.com faxback 408-970-5600 2-4 document number: 70268 s-57253erev. d, 24-feb-98
on-resistance vs. junction temperature source-drain diode forward voltage (normalized) on-resistance ( t j junction temperature ( c) v sd source-to-drain voltage (v) r ds(on) w ) source current (a) i s 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 25 0 25 50 75 100 125 150 175 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 15 a t j = 25 c t j = 175 c 0
safe operating area v ds drain-to-source voltage (v) drain current (a) i d 200 10 0.1 0.1 1 10 100 1 100 t c = 25 c single pulse 1 ms 10 ms 100 ms dc normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 4 10 3 10 2 10 1 1 normalized effective transient thermal impedance maximum drain current vs. casetemperature t c case temperature ( c) drain current (a) i d 0 7 14 21 28 35 0 25 50 75 100 125 150 175 0.2 0.1 duty cycle = 0.5 3 0.02 0.05 single pulse limited by r ds(on)
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